Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg
We report on the formation of low resistivity ohmic contacts to p-GaN, r{sub c} < 10{sup {minus}4}{Omega}cm{sup 2}, by increasing the concentration of the active Mg in the subcontact zone, via Zr-mediated release of hydrogen. We have investigated the process of evolution of hydrogen from MOCVD grown p-GaN via Zr-based metallization, and determined the optimum processing conditions (temperature and gas ambient) for fabrication of low resistance ohmic contacts. When the process is conducted in N{sub 2} flow, the metallization remains stable at temperatures required to achieve the ohmic behavior, and the morphology of the metal/semiconductor interface is unaltered by such a heat treatment. The processing in O{sub 2}, on the contrary, causes the interdiffusion of metallization constituents and the incorporation of oxygen into the semiconductor subcontact region, which could be responsible for increased resistivity of these contacts.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- Polish Committee for Scientific Research/PBZ 28, 11/P9 (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 772145
- Report Number(s):
- LBNL-46981; R&D Project: 43BY01; TRN: AH200109%%77
- Resource Relation:
- Conference: E-MRS 2000 Meeting, Strasbourg (FR), 05/30/2000--06/02/2000; Other Information: PBD: 27 Nov 2000
- Country of Publication:
- United States
- Language:
- English
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