Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications
Abstract
Recombination processes in antimonide-based (TPV) devices have been investigated using a technique, in which a Nd-YAG pulsed laser is materials for thermophotovoltaic radio-frequency (RF) photoreflectance used to excite excess carriers and the short-pulse response and photoconductivity decay are monitored with an inductively-coupled non-contacting RF probe. The system has been used to characterize surface and bulk recombination mechanisms in Sb-based materials.
- Authors:
-
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Publication Date:
- Research Org.:
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 767326
- Report Number(s):
- KAPL-P-000323; K99136
- DOE Contract Number:
- AC12-76SN00052
- Resource Type:
- Thesis/Dissertation
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY
Citation Formats
Saroop, Sudesh. Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications. United States: N. p., 1999.
Web. doi:10.2172/767326.
Saroop, Sudesh. Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications. United States. https://doi.org/10.2172/767326
Saroop, Sudesh. 1999.
"Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications". United States. https://doi.org/10.2172/767326. https://www.osti.gov/servlets/purl/767326.
@article{osti_767326,
title = {Recombination Processes on Low Bandgap Antimonides for Thermophotovoltaic Applications},
author = {Saroop, Sudesh},
abstractNote = {Recombination processes in antimonide-based (TPV) devices have been investigated using a technique, in which a Nd-YAG pulsed laser is materials for thermophotovoltaic radio-frequency (RF) photoreflectance used to excite excess carriers and the short-pulse response and photoconductivity decay are monitored with an inductively-coupled non-contacting RF probe. The system has been used to characterize surface and bulk recombination mechanisms in Sb-based materials.},
doi = {10.2172/767326},
url = {https://www.osti.gov/biblio/767326},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Sep 01 00:00:00 EDT 1999},
month = {Wed Sep 01 00:00:00 EDT 1999}
}
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