Ultrafast Scanning Tunneling Microscopy Using a Photoexcited Low-Temperature-Grown GaAs Tip
Conference
·
OSTI ID:759259
The authors report ultrafast scanning tunneling microscopy using a low-temperature-grown GaAs tip photoexcited by 100-fs, 800-nm pulses. They use this tip to detect picosecond transients on a coplanar stripline and demonstrate a temporal resolution of 1.7 ps. A dependence of the transient signal upon spatial position of the tip is revealed, indicating that the signal arises from areas on the sample smaller than {approximately}20nm.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 759259
- Report Number(s):
- LA-UR-98-4473; TRN: AH200028%%94
- Resource Relation:
- Conference: Ultrafast Phenomena XI, Garmisch-Partenkirchen (DE), 07/12/1998--07/17/1998; Other Information: PBD: 21 May 1999
- Country of Publication:
- United States
- Language:
- English
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