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Title: Thin film CuIn{sub 1{minus}x}Ga{sub x}Se-based solar cells prepared from solution-based precursors

Abstract

The authors have fabricated high-efficiency thin-film CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).

Authors:
; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
756336
Report Number(s):
NREL/CP-590-28415
TRN: AH200017%%56
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Conference
Resource Relation:
Conference: 16th European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, Scotland (UK), 05/01/2000--05/05/2000; Other Information: PBD: 22 May 2000
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; COPPER SELENIDE SOLAR CELLS; INDIUM SELENIDE SOLAR CELLS; GALLIUM SELENIDES; FABRICATION; PRECURSOR; PHOTOVOLTAICS; CUIN(1-X)GA(X)SE; ELECTRODEPOSITION; DEVICES; SOLAR CELLS; PHYSICAL VAPOR DEPOSITION (PVD); GRAZING INCIDENT X-RAY DIFFRACTION (GIXRD); DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS)

Citation Formats

Bhattacharya, R N, Balcioglu, A, Ramanathan, K, and Batchelor, W. K., Ahrenkiel, R. K. Thin film CuIn{sub 1{minus}x}Ga{sub x}Se-based solar cells prepared from solution-based precursors. United States: N. p., 2000. Web.
Bhattacharya, R N, Balcioglu, A, Ramanathan, K, & Batchelor, W. K., Ahrenkiel, R. K. Thin film CuIn{sub 1{minus}x}Ga{sub x}Se-based solar cells prepared from solution-based precursors. United States.
Bhattacharya, R N, Balcioglu, A, Ramanathan, K, and Batchelor, W. K., Ahrenkiel, R. K. 2000. "Thin film CuIn{sub 1{minus}x}Ga{sub x}Se-based solar cells prepared from solution-based precursors". United States. https://www.osti.gov/servlets/purl/756336.
@article{osti_756336,
title = {Thin film CuIn{sub 1{minus}x}Ga{sub x}Se-based solar cells prepared from solution-based precursors},
author = {Bhattacharya, R N and Balcioglu, A and Ramanathan, K and Batchelor, W. K., Ahrenkiel, R. K.},
abstractNote = {The authors have fabricated high-efficiency thin-film CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction (GIXRD) were performed on devices prepared from EP and AP precursor films. The authors have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).},
doi = {},
url = {https://www.osti.gov/biblio/756336}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon May 22 00:00:00 EDT 2000},
month = {Mon May 22 00:00:00 EDT 2000}
}

Conference:
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