Medium-range order in hydrogenated amorphous silicon measured by fluctuation microscopy
The authors have characterized with fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H{sub 2} dilution of the SiH{sub 4} precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition methods and H{sub 2} content. The PECVD film grown with high H{sub 2} dilution contains Si crystals {approximately} 5 nm in diameter at a density of {approximately} 10{sup 9} cm{sup 2}. The amorphous matrix surrounding these crystals shows no difference in medium-range order from the standard PECVD film.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 754474
- Report Number(s):
- ANL/MSD/CP-101088; TRN: AH200016%%103
- Resource Relation:
- Conference: 2000 MRS Spring Meeting, San Francisco, CA (US), 04/24/2000--04/28/2000; Other Information: PBD: 17 Apr 2000
- Country of Publication:
- United States
- Language:
- English
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