GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates
The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecule beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer, strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 {mu}m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb vs GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in non-ideal interfaces under certain growth conditions. At low injection currents, double heterostructure lasers with GaAsSb/InGaAs bilayer quantum well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities as low as 120 A/cm{sup 2} at 1.17 {mu}m, and 2.1 kA/cm{sup 2} at 1.21 {mu}m.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 752665
- Report Number(s):
- SAND2000-0689J; TRN: AH200018%%368
- Journal Information:
- Journal of Vacuum Science and Technology B, Other Information: Submitted to Journal of Vacuum Science and Technology B; PBD: 15 Mar 2000
- Country of Publication:
- United States
- Language:
- English
Similar Records
Antimonide-Based Long-Wavelength Lasers on GaAs Substrates
Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity