Photoluminescence-linewidth-derived exciton mass for InGaAsN alloys
The authors report a measurement of the variation of the value of the linewidth of an excitonic transition in InGaAsN alloys (1 and 2% nitrogen) as a function of hydrostatic pressure using photoluminescence spectroscopy. The samples were grown by metal-organic chemical vapor deposition and the photoluminescence measurements were performed a 4K. The authors find that the value of the excitonic linewidth increases as a function of pressure until about 100 kbars after which it tends to saturate. This change in the excitonic linewidth is used to derive the pressure variation of the reduced mass of the exciton using a theoretical formalism which is based on the premise that the broadening of the excitonic transition is caused primarily by compositional fluctuations in a completely disordered alloy. The variation of the excitonic reduced mass thus derived is compared with that recently determined using a first-principles band structure calculation based on local density approximation.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 751209
- Report Number(s):
- SAND2000-0262J; TRN: AH200020%%121
- Journal Information:
- Physical Review B, Other Information: Submitted to Physical Review B; PBD: 27 Jan 2000
- Country of Publication:
- United States
- Language:
- English
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