Detection of electron and hole traps in CdZnTe radiation detectors by thermoelectric emission spectroscopy and thermally stimulated conductivity
The electrical properties of CdZnTe radiation detectors are largely determined by electron and hole traps in this material. The traps, in addition to degrading the detector performance, can function as dopants and determine the resistivity of the material. Thermoelectric emission spectroscopy and thermally stimulated conductivity are used to detect these traps in a commercially available spectrometer-grade CdZnTe detector, and the electrical resistivity is measured as a function of temperature. A deep electron trap having an energy of 695 meV and cross section of 8 x 10{sup {minus}16}cm{sup 2} is detected and three hole traps having energies of 70 {+-} 20 meV, 105 {+-} 30 meV and 694 {+-} 162 meV are detected. A simple model based on these traps explains quantitatively all the data, including the electrical properties at room temperature and also their temperature dependence.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 751150
- Report Number(s):
- SAND98-8600C; TRN: US0003473
- Resource Relation:
- Conference: SPIE Proceedings of Hard X-ray and Gamma-Ray Detector Physics and Applications, San Diego, CA (US), 07/19/1998--07/22/1998; Other Information: PBD: 18 Jun 1998
- Country of Publication:
- United States
- Language:
- English
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