Hybrid microcircuit metallization system for the SLL micro actuator
A thin film technique developed for the SLL Micro Actuator in which both gold and aluminum can be incorporated on sapphire or fine grained alumina substrates in a two-level metallization system is described. Tungsten is used as a lateral transition metal permitting electrical contact between the gold and aluminum without the two metals coming in physical contact. Silicon dioxide serves as an insulator between the tungsten and aluminum for crossover purposes, and vias through the silicon dioxide permit interconnections where desired. Tungsten-gold is the first level conductor except at crossovers where tungsten only is used and aluminum is the second level conductor. Sheet resistances of the two levels can be as low as 0.01 ohm/square. Line widths and spaces as small as 0.025 mm can be attained. A second layer of silicon dioxide is deposited over the metallization and opened for all gold and aluminum bonding areas. The metallization system permits effective interconnection of a mixture of devices having both gold and aluminum terminations without creating undesirable gold-aluminum interfaces. Processing temperatures up to 400/sup 0/C can be tolerated for short times without effect on bondability, conductor, and insulator characteristics, thus permitting silicon-gold eutectic die attachment, component soldering, and higher temperatures during gold lead bonding. Tests conducted on special test pattern circuits indicate good stability over the temperature range -55 to +150/sup 0/C. Aging studies indicate no degradation in characteristics in tests of 500 h duration at 150/sup 0/C.
- Research Organization:
- Sandia Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- US Energy Research and Development Administration (ERDA)
- DOE Contract Number:
- AT(29-1)-789
- OSTI ID:
- 7351044
- Report Number(s):
- SAND-75-0313; TRN: 76-014820
- Country of Publication:
- United States
- Language:
- English
Similar Records
Annual Progress Report for the Period July 1961 Through June 1962
Gold aluminum interconnect stability on thin film hybrid microcircuit substrates
Related Subjects
ACTUATORS
FABRICATION
MICROELECTRONIC CIRCUITS
ALUMINIUM
GOLD
MINIATURIZATION
SILICON OXIDES
STABILITY
TUNGSTEN
CHALCOGENIDES
ELECTRONIC CIRCUITS
ELEMENTS
METALS
OXIDES
OXYGEN COMPOUNDS
REFRACTORY METALS
SILICON COMPOUNDS
TRANSITION ELEMENTS
420800* - Engineering- Electronic Circuits & Devices- (-1989)