Highly doped p-ZnTe films and quantum well structures grown by nonequilibrium pulsed laser ablation
Abstract
Highly p-doped ZnTe films have been grown on semi-insulating GaAs (001) and unintentionally doped (p-type) GaSb (001) substrates by pulsed KrF (248 nm) excimer laser ablation of a ZnTe target through an N{sub 2} ambient, without the use of any assisting (DC or AC) plasma source. Free hole concentrations in the mid-10{sup 19} cm{sup {minus}3} to > 10{sup 20} cm{sup {minus}3} range have been obtained. This appears to be the first time that any wide band gap (E{sub g} {ge} 2 eV) II-VI compound (or other) semiconductor has been impurity-doped from the gas phase by pulsed-laser ablation (PLA). The maximum carrier concentrations also may be the highest obtained for ZnTe by any method thus far. Because pulsed laser deposition is inherently digital, attractive deposition rates can be combined with precise control of layer thickness in epitaxial multilayered structures. Typical deposition conditions are < 0.5 {angstrom} per laser pulse, with crystalline quality governed by tradeoffs between substrate temperature, pulse repetition rate, and the focused pulsed laser energy density. PLA`s capability for growth of very thin epitaxial layers is being exploited and studied through growth of doped heteroepitaxial quantum well structures in the nearly lattice-matched ZnTe/CdSe//GaSb(substrate) system. Results obtained from growth andmore »
- Authors:
-
- Oak Ridge National lab., TN (United States). Solid State Div.
- Harvard Univ., Cambridge, MA (United States). Div. of Applied Science
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE, Washington, DC (United States)
- OSTI Identifier:
- 73011
- Report Number(s):
- CONF-950820-1
ON: DE95012885; TRN: AHC29519%%139
- DOE Contract Number:
- AC05-84OR21400
- Resource Type:
- Conference
- Resource Relation:
- Conference: 11. international conference on the electronic properties of two dimensional systems, Nottingham (United Kingdom), 7-11 Aug 1995; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; DOPED MATERIALS; VAPOR PHASE EPITAXY; HETEROJUNCTIONS; ZINC TELLURIDES; CADMIUM SELENIDES; CRYSTAL DOPING; LASER RADIATION; GALLIUM ARSENIDES; GALLIUM ANTIMONIDES; CRYSTAL GROWTH
Citation Formats
Lowndes, D H, Rouleau, C M, Budai, J D, Geohegan, D B, and McCamy, J W. Highly doped p-ZnTe films and quantum well structures grown by nonequilibrium pulsed laser ablation. United States: N. p., 1995.
Web.
Lowndes, D H, Rouleau, C M, Budai, J D, Geohegan, D B, & McCamy, J W. Highly doped p-ZnTe films and quantum well structures grown by nonequilibrium pulsed laser ablation. United States.
Lowndes, D H, Rouleau, C M, Budai, J D, Geohegan, D B, and McCamy, J W. 1995.
"Highly doped p-ZnTe films and quantum well structures grown by nonequilibrium pulsed laser ablation". United States. https://www.osti.gov/servlets/purl/73011.
@article{osti_73011,
title = {Highly doped p-ZnTe films and quantum well structures grown by nonequilibrium pulsed laser ablation},
author = {Lowndes, D H and Rouleau, C M and Budai, J D and Geohegan, D B and McCamy, J W},
abstractNote = {Highly p-doped ZnTe films have been grown on semi-insulating GaAs (001) and unintentionally doped (p-type) GaSb (001) substrates by pulsed KrF (248 nm) excimer laser ablation of a ZnTe target through an N{sub 2} ambient, without the use of any assisting (DC or AC) plasma source. Free hole concentrations in the mid-10{sup 19} cm{sup {minus}3} to > 10{sup 20} cm{sup {minus}3} range have been obtained. This appears to be the first time that any wide band gap (E{sub g} {ge} 2 eV) II-VI compound (or other) semiconductor has been impurity-doped from the gas phase by pulsed-laser ablation (PLA). The maximum carrier concentrations also may be the highest obtained for ZnTe by any method thus far. Because pulsed laser deposition is inherently digital, attractive deposition rates can be combined with precise control of layer thickness in epitaxial multilayered structures. Typical deposition conditions are < 0.5 {angstrom} per laser pulse, with crystalline quality governed by tradeoffs between substrate temperature, pulse repetition rate, and the focused pulsed laser energy density. PLA`s capability for growth of very thin epitaxial layers is being exploited and studied through growth of doped heteroepitaxial quantum well structures in the nearly lattice-matched ZnTe/CdSe//GaSb(substrate) system. Results obtained from growth and characterization of heterostructures in this system will be presented.},
doi = {},
url = {https://www.osti.gov/biblio/73011},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jun 01 00:00:00 EDT 1995},
month = {Thu Jun 01 00:00:00 EDT 1995}
}