Divacancy-hydrogen complexes in dislocation-free high-purity germanium. [Annealing, Hall effect, steady-state concentration energy dependence]

Conference · Wed Sep 01 00:00:00 EDT 1976

OSTI ID:7230820

Haller, E E; Hubbard, G S; Hansen, W L; Seeger, A

A defect center with a single acceptor level at E/sub v/ + 0.08 eV appears in H/sub 2/-grown dislocation-free high-purity germanium. Its concentration changes reversibly upon annealing up to 650 K. By means of Hall-effect and conductivity measurements over a large temperature range the temperature dependence of the steady-state concentration between 450 and 720 K as well as the transients following changes in temperature were determined. The observed acceptor level is attributed to the divacancy-hydrogen complex V/sub 2/H. The complex reacts with hydrogen, dissolved in the Ge lattice or stored in traps, according to V/sub 2/H + H reversible V/sub 2/H/sub 2/. An energy level associated with the divacancy-dihydrogen complex was not observed. These results are in good agreement with the idea that hydrogen in germanium forms a ''very deep donor'' (i.e., the energy level lies inside the valence band).

• Research Organization: California Univ., Berkeley (USA). Lawrence Berkeley Lab.
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 7230820
• Report Number(s): LBL-4274; CONF-760999-1; TRN: 77-006429
• Resource Relation: Conference: International conference on radiation effects in semiconductors, Dubrovnik, Yugoslavia, 6 Sep 1976
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM
CRYSTAL DEFECTS
VACANCIES
ANNEALING
DISLOCATIONS
DISSOCIATION
ELECTRIC CONDUCTIVITY
ENERGY LEVELS
HALL EFFECT
HYDROGEN
PHYSICAL RADIATION EFFECTS
RECOMBINATION
STEADY-STATE CONDITIONS
TEMPERATURE DEPENDENCE
TRANSIENTS
CRYOGENIC FLUIDS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
FLUIDS
HEAT TREATMENTS
LINE DEFECTS
METALS
NONMETALS
PHYSICAL PROPERTIES
POINT DEFECTS
RADIATION EFFECTS
360602* - Other Materials- Structure & Phase Studies