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Title: Improved semiconductors for photovoltaic cells. Quarterly report No. 9, July 1-September 1, 1978

Abstract

Device related work has been directed toward the development of effective single and double layer antireflection coatings for Zn/sub 3/P/sub 2/. The reflectivity of bare Zn/sub 3/P/sub 2/. The reflectivity of bare Zn/sub 3/P/sub 2/ as well as SiO, Ta/sub 2/O/sub 5/, MgF/sub 2//ZnS and SiO/sub 2//ZnS coated samples have been measured. Reflection losses have been reduced to 5 to 6% with double layer Ar coatings. The experimental reflectivity integrated over the photon flux distribution yields a maximum J/sub SC/ = 26.5 ma/cm/sup 2/ for AM1.5 insolation (83.2 mW/cm/sup 2/). Theoretical modeling of the Schottky barrier grid device was begun in order to establish the relationship between collection efficiency, device geometry and minority carrier diffusion length. The study of the barrier height of metal/Zn/sub 3/P/sub 2/ junctions has been completed. Barrier height is particularly sensitive to surface damage such as that incurred during glow discharge cleaning. Thin polycrystalline films are now entering the device development stage. Chemical polishing of the surface of thin films with bromine-methanol yields surfaces suitable for photolithography. Devices however, have extremely high series resistance due to the high sheet resistance of the film. A multilayer substrate has been developed which is promising. It consists of micamore » which acts as a mechanical support and has the proper coefficient of expansion, a thin film of iron or slver which makes for low sheet resistance and a carbon film cover which makes ohmic contact to Zn/sub 3/P/sub 2/ and effectively acts as a diffusion barrier.« less

Publication Date:
Research Org.:
Delaware Univ., Newark (USA). Inst. of Energy Conversion
OSTI Identifier:
7085103
Report Number(s):
COO-2460-9
DOE Contract Number:  
AC01-76ET20221
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ZINC PHOSPHIDE SOLAR CELLS; ANTIREFLECTION COATINGS; FABRICATION; ZINC PHOSPHIDES; VACUUM COATING; CHEMICAL POLISHING; DIFFUSION LENGTH; EFFICIENCY; FILMS; MAGNESIUM FLUORIDES; MICA; POLYCRYSTALS; RESEARCH PROGRAMS; SILICON OXIDES; SUBSTRATES; TANTALUM OXIDES; ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; COATINGS; CRYSTALS; DEPOSITION; DIMENSIONS; DIRECT ENERGY CONVERTERS; EQUIPMENT; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; LENGTH; MAGNESIUM COMPOUNDS; MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PNICTIDES; POLISHING; SILICON COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; SURFACE COATING; SURFACE FINISHING; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

. Improved semiconductors for photovoltaic cells. Quarterly report No. 9, July 1-September 1, 1978. United States: N. p., 1978. Web. doi:10.2172/7085103.
. Improved semiconductors for photovoltaic cells. Quarterly report No. 9, July 1-September 1, 1978. United States. https://doi.org/10.2172/7085103
. 1978. "Improved semiconductors for photovoltaic cells. Quarterly report No. 9, July 1-September 1, 1978". United States. https://doi.org/10.2172/7085103. https://www.osti.gov/servlets/purl/7085103.
@article{osti_7085103,
title = {Improved semiconductors for photovoltaic cells. Quarterly report No. 9, July 1-September 1, 1978},
author = {},
abstractNote = {Device related work has been directed toward the development of effective single and double layer antireflection coatings for Zn/sub 3/P/sub 2/. The reflectivity of bare Zn/sub 3/P/sub 2/. The reflectivity of bare Zn/sub 3/P/sub 2/ as well as SiO, Ta/sub 2/O/sub 5/, MgF/sub 2//ZnS and SiO/sub 2//ZnS coated samples have been measured. Reflection losses have been reduced to 5 to 6% with double layer Ar coatings. The experimental reflectivity integrated over the photon flux distribution yields a maximum J/sub SC/ = 26.5 ma/cm/sup 2/ for AM1.5 insolation (83.2 mW/cm/sup 2/). Theoretical modeling of the Schottky barrier grid device was begun in order to establish the relationship between collection efficiency, device geometry and minority carrier diffusion length. The study of the barrier height of metal/Zn/sub 3/P/sub 2/ junctions has been completed. Barrier height is particularly sensitive to surface damage such as that incurred during glow discharge cleaning. Thin polycrystalline films are now entering the device development stage. Chemical polishing of the surface of thin films with bromine-methanol yields surfaces suitable for photolithography. Devices however, have extremely high series resistance due to the high sheet resistance of the film. A multilayer substrate has been developed which is promising. It consists of mica which acts as a mechanical support and has the proper coefficient of expansion, a thin film of iron or slver which makes for low sheet resistance and a carbon film cover which makes ohmic contact to Zn/sub 3/P/sub 2/ and effectively acts as a diffusion barrier.},
doi = {10.2172/7085103},
url = {https://www.osti.gov/biblio/7085103}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 1978},
month = {Sun Jan 01 00:00:00 EST 1978}
}