15.4% CuIn1-XGaXSe2-Based Photovoltaic Cells from Solution-Based Precursor Films

Conference · Tue May 25 00:00:00 EDT 1999

OSTI ID:7077

Bhattacharya, R N; Batchelor, W; Contreras, M A; Noufi, R N ^[1]; Hiltner, J F; Sites, J R ^[2]

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1. National Renewable Energy Laboratory
2. Department of Physics, Colorado State University

We have fabricated 15.4%- and 12.4%-efficient CuIn1-XGaXSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposition (ED) and electroless-deposition (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final film composition to CuIn1-XGaXSe2. The ED and EL device parameters are compared with those of a recent world record, an 18.8%-efficient PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 7077
• Report Number(s): NREL/CP-590-26611; ON: DE00007077; TRN: US200306%%282
• Resource Relation: Conference: Presented at the European Materials Research Society Meeting, Strasbourg (FR), 06/01/1999--06/04/1999; Other Information: PBD: 25 May 1999
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CAPACITANCE
ELECTRODEPOSITION
PHOTOVOLTAIC CELLS
PHYSICAL VAPOR DEPOSITION
PRECURSOR
SPECTRAL RESPONSE