Growth and Fabrication of GaN/AlGaN Heterojunction Bipolar Transistor
A GaN/AlGaN heterojunction bipolar transistor structure with Mg doping in the base and Si Doping in the emitter and collector regions was grown by Metal Organic Chemical Vapor Deposition in c-axis Al(2)O(3). Secondary Ion Mass Spectrometry measurements showed no increase in the O concentration (2-3x10(18) cm(-3)) in the AlGaN emitter and fairly low levels of C (~4-5x10(17) cm (-3)) throughout the structure. Due to the non-ohmic behavior of the base contact at room temperature, the current gain of large area (~90 um diameter) devices was <3. Increasing the device operating temperature led to higher ionization fractions of the mg acceptors in the base, and current gains of ~10 were obtained at 300 degree C.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7022
- Report Number(s):
- SAND99-0612J; ON: DE00007022
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters
- Country of Publication:
- United States
- Language:
- English
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