Continuous Czochralski process development. LSSA Large Area Silicon Sheet Task. Quarterly report No. 3, April--June 1978

Technical Report · Sat Jul 01 00:00:00 EDT 1978

DOI:https://doi.org/10.2172/6866589· OSTI ID:6866589

Rea, S N

A Czochralski crystal growing furnace is being set up to permit installation of a continuous molten silicon feed apparatus. Numerous modifications have been designed and constructed to convert a Varian 2898A furnace to a continuous mode of operation. New laboratory facilities to house the continuous furnace were prepared and assembly of the furnace has been completed. Furnace checkout will be carried out early in the next quarter. Economic modeling of the continuous Czochralski process has continued utilizing the IPEG option of SAMICS. The influence of both crystal size and total furnace run size have been examined. Results of these studies indicate that for 10-cm diameter crystal, 100-kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100-kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/m/sup 2/ exclusive of polysilicon and slicing is obtained.

• Research Organization: Texas Instruments, Inc., Dallas, TX (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: NAS-7-100-954887
• OSTI ID: 6866589
• Report Number(s): DOE/JPL/954887-3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
FURNACES
DESIGN
SILICON
CRYSTAL GROWTH
COST
CUTTING
CZOCHRALSKI METHOD
ECONOMIC ANALYSIS
EQUIPMENT
PERFORMANCE TESTING
SILICON SOLAR CELLS
DIRECT ENERGY CONVERTERS
ECONOMICS
ELEMENTS
MACHINING
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SOLAR CELLS
TESTING
140501* - Solar Energy Conversion- Photovoltaic Conversion
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