Low-Cost, High-Efficiency Solar Cells Utilizing GaAs-on-Si Technology, Annual Subcontract Report, 1 August 1991 - 31 July 1992
This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 6836731
- Report Number(s):
- NREL/TP-451-5353; ON: DE93000096
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
DEPOSITION
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
GALLIUM ARSENIDES
COST
DEFECTS
EFFICIENCY
MICROSTRUCTURE
NUCLEATION
PHOTOVOLTAIC CONVERSION
PROGRESS REPORT
SILICON
SUBSTRATES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONVERSION
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERSION
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
ELEMENTS
ENERGY CONVERSION
EQUIPMENT
GALLIUM COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
photovoltaics
solar cells
silicon
high efficiency
low-cost
gallium arsenide
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies