Characterization of photoluminescent (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3} thin-films prepared by metallorganic chemical vapor deposition
- Univ. of California, San Diego, La Jolla, CA (United States)
- Los Alamos National Lab., NM (United States). Materials Science and Technology Div.
Europium doped yttrium oxide, (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3}, thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y{sub 2}O{sub 3}, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y{sub 2}O{sub 3}:Eu{sup 3+} was observed in x-ray diffraction for deposition temperatures {ge}600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra.
- Research Organization:
- Los Alamos National Lab., Materials Science and Technology Div., NM (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Management and Administration, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 676881
- Report Number(s):
- LA-UR-98-1970; CONF-971201-; ON: DE99000671; CNN: Grant DARPA MDA972-93-1-0030; TRN: 99:001359
- Resource Relation:
- Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: [1998]
- Country of Publication:
- United States
- Language:
- English
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