Structural and electronic studies of defects in amorphous silicon. Technical progress report, September-November, 1980

Technical Report · Mon Dec 22 00:00:00 EST 1980

DOI:https://doi.org/10.2172/6721641· OSTI ID:6721641

Street, R. A.

Separate abstracts were prepared for the two sections included. (WHK)

• Research Organization: Xerox Palo Alto Research Center, CA (USA)
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6721641
• Report Number(s): SERI/PR-9079-1-T3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SILICON
DEFECTS
ELECTRONIC STRUCTURE
AMORPHOUS STATE
LEADING ABSTRACT
PHOTOCONDUCTIVITY
ABSTRACTS
DOCUMENT TYPES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
PHYSICAL PROPERTIES
SEMIMETALS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360602 - Other Materials- Structure & Phase Studies
656000 - Condensed Matter Physics