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Title: Temperature and ion-mass dependence of amorphization dose for ion beam irradiated zircon (ZrSiO[sub 4])

Conference ·
OSTI ID:6670123
;  [1];  [2];  [3]
  1. New Mexico Univ., Albuquerque, NM (United States). Dept. of Geology
  2. Pacific Northwest Lab., Richland, WA (United States)
  3. Toronto Univ., ON (Canada). Dept. of Geological Sciences

The temperature dependence of amorphization dose for zircon under 1.5 MeV Kr ion irradiation has been investigated using the ANL HVEM-Tandem Facility. Three regimes were observed in the amorphization dose-temperature curve. In the first regime (15 to 300 K), the critical amorphization dose increased from 3.06 to 4.5 ions/nm[sup 2]. In the second regime (300 to 473 K), there is little change in the amorphizationdose. In the third regime (> 473 K), the amorphization dose increased exponentially to 8.3 ions/nm[sup 2] at 913 K. This temperature dependence of amorphization dose can be described by two processes with different activation energies (0.018 and 0.31 eV respectively) which are attributed to close pair recombination in the cascades at low temperatures and radiation-enhanced epitaxial recrystallization at higher temperatures. The upper temperature limit for amorphization of zircon is estimated to be 1100 K. The ion-mass dependence of the amorphization dose (in dpa) has also been discussed in terms of the energy to recoils based on data obtained from He, Ne, Ar, Kr, Xe irradiations and a [sup 238]Pu-doped sample.

Research Organization:
Pacific Northwest Lab., Richland, WA (United States)
Sponsoring Organization:
USDOE; National Aeronautic and Space Administration (NASA); USDOE, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
DOE Contract Number:
AC06-76RL01830; FG04-84ER45099
OSTI ID:
6670123
Report Number(s):
PNL-SA-21583; CONF-921101-95; ON: DE93007881
Resource Relation:
Conference: 16. Material Research Society international symposium on the scientific basis for nuclear waste management fall meeting, Boston, MA (United States), 30 Nov - 5 Dec 1992
Country of Publication:
United States
Language:
English