Coplanar-grid CdZnTe detector with three-dimensional position sensitivity

Technical Report · Mon Jun 01 00:00:00 EDT 1998

DOI:https://doi.org/10.2172/666049· OSTI ID:666049

Luke, P N; Amman, M; Lee, J S; Yaver, H

A 3-dimensional position-sensitive coplanar-grid detector design for use with compound semiconductors is described. This detector design maintains the advantage of a coplanar-grid detector in which good energy resolution can be obtained from materials with poor charge transport. Position readout in two dimensions is accomplished using proximity-sensing electrodes adjacent to the electron-collecting grid electrode of the detector. Additionally, depth information is obtained by taking the ratio of the amplitudes of the collecting grid signal and the cathode signal. Experimental results from a prototype CdZnTe detector are presented.

• Research Organization: Lawrence Berkeley National Lab., Engineering Div., Berkeley, CA (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 666049
• Report Number(s): LBNL-41480; CONF-980676-; ON: DE98059372; TRN: 99:000822
• Resource Relation: Conference: 18. European symposium on semiconductor detectors, new developments in radiation detectors, Schloss Elmau (Germany), 14-17 Jun 1998; Other Information: PBD: Jun 1998
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
POSITION SENSITIVE DETECTORS
SEMICONDUCTOR DETECTORS
CADMIUM TELLURIDES
ZINC TELLURIDES
DESIGN
READOUT SYSTEMS
EXPERIMENTAL DATA
PERFORMANCE
GAMMA DETECTION
ALPHA DETECTION