Irradiation-induced segregation in Ni--Si alloys. [525/sup 0/C with 3 MeV /sup 58/Ni/sup +/ ions]

Conference · Sun Jan 01 00:00:00 EST 1978

OSTI ID:6652387

Rehn, L. E.; Okamoto, P. R.; Potter, D. I.; Wiedersich, H.

Radiation-induced segregation was studied in an Ni-1 at. % Si alloy after irradiation at a temperature of approximately 525/sup 0/C with 3-MeV /sup 58/Ni/sup +/ ions. Profiles of alloy composition as a function of depth from the irradiated surface were obtained by standard Auger techniques and ion-sputtering at room temperature. Rapid segregation of Si toward the irradiated surface was observed. The solubility limit of Si in Ni was reached at the surface after a dose of only 0.05 dpa. Segregation continued to increase up to the highest dose (6.5 dpa) which was investigated. Precipitation of Ni/sub 3/Si occurred at the external surface and internally on dislocation loops. The experimental results are compared with calculations using the Johnson-Lam segregation model and a set of parameters that was used previously to fit the temperature dependence of radiation-induced segregation in Ni-1 at. % Si.

• Research Organization: Argonne National Lab., IL (USA)
• Sponsoring Organization: USDOE
• DOE Contract Number: W-31-109-ENG-38
• OSTI ID: 6652387
• Report Number(s): CONF-780722-12; TRN: 78-019873
• Resource Relation: Conference: 9. symposium on effects of radiation in structural materials, Richland, WA, USA, 10 Jul 1978
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
NICKEL BASE ALLOYS
PHYSICAL RADIATION EFFECTS
CREEP
DEFECTS
GRAIN BOUNDARIES
INTERSTITIALS
MECHANICAL PROPERTIES
PHASE DIAGRAMS
SEGREGATION
SILICON
SILICON ADDITIONS
SOLUBILITY
SURFACES
SWELLING
TEMPERATURE EFFECTS
VOIDS
ALLOYS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIAGRAMS
ELEMENTS
MICROSTRUCTURE
NICKEL ALLOYS
POINT DEFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON ALLOYS
360106* - Metals & Alloys- Radiation Effects
360103 - Metals & Alloys- Mechanical Properties