High gain GaAs photoconductive semiconductor switches: Switch longevity

Conference · Wed Jul 01 00:00:00 EDT 1998

OSTI ID:663222

Loubriel, G M; Zutavern, F J; Mar, A ^[1]

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1. and others

Optically activated, high gain GaAs switches are being tested for many different pulsed power applications that require long lifetime (longevity). The switches have p and n contact metallization (with intentional or unintentional dopants) configured in such a way as to produce p-i-n or n-i-n switches. The longevity of the switches is determined by circuit parameters and by the ability of the contacts to resist erosion. This paper will describe how the switches performed in test-beds designed to measure switch longevity. The best longevity was achieved with switches made with diffused contacts, achieving over 50 million pulses at 10 A and over 2 million pulses at 80 A.

• Research Organization: Sandia National Labs., High Power Electromagnetics Dept., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Financial Management and Controller, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 663222
• Report Number(s): SAND-98-0475C; CONF-980665-; ON: DE98002958; BR: YN0100000; TRN: AHC29818%%54
• Resource Relation: Conference: 23. international power modulator symposium, Rancho Mirage, CA (United States), 22 Jun 1998; Other Information: PBD: [1998]
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR SWITCHES
GALLIUM ARSENIDES
PHOTOCONDUCTIVITY
DESIGN
PERFORMANCE
SERVICE LIFE
SEMICONDUCTOR JUNCTIONS