Development of pulsed processes for the manufacture of solar cells. Quarterly progress report No. 3, April--July 1978

Technical Report · Sat Jul 01 00:00:00 EDT 1978

DOI:https://doi.org/10.2172/6535099· OSTI ID:6535099

Third quarter results under a program to develop ion implantation and specialized, associated processes necessary to achieve automated production of silicon solar cells are described. An ion implantation facility development for solar cell production is described, and a design for an automated production implanter is presented. Also, solar cell development efforts using combined ion implantation and pulsed energy techniques are discussed. Cell performance comparisons have also been made in which junctions and back surface fields were prepared by diffusion and ion implantation. A model is presented to explain the mechanism of ion implantation damage annealing using pulsed energy sources. Functional requirements have been determined for a pulsed electron beam processor for annealing ion implantation damage at a rate compatible with a 100 milliampere ion implanter. These rates result in a throughput of 100 megawatts of solar cell product per year.

• Research Organization: Spire Corp., Bedford, MA (USA)
• DOE Contract Number: NAS-7-100-954786
• OSTI ID: 6535099
• Report Number(s): DOE/JPL/954786-5
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
ANNEALING
ION IMPLANTATION
MANUFACTURING
AUTOMATION
DIFFUSION
ECONOMICS
ELECTRON BEAMS
FABRICATION
ION SOURCES
PERFORMANCE
PRODUCTION
PULSE TECHNIQUES
PULSED IRRADIATION
VACUUM SYSTEMS
BEAMS
DIRECT ENERGY CONVERTERS
HEAT TREATMENTS
IRRADIATION
LEPTON BEAMS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
140501* - Solar Energy Conversion- Photovoltaic Conversion