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Title: Fracture toughness of materials

Technical Report ·
DOI:https://doi.org/10.2172/6493240· OSTI ID:6493240

Crack tip dislocation emission in bulk specimens have been measured in single crystal specimens and the measurements are well below the accepted theoretical values for dislocation emission. The image forces on a dislocation due to the presence of a semi-infinite crack are used to calculate the potential energy of the dislocation around the crack. Expressions for the radial and tangential forces and for slip and climb forces have been found. Crack tip deformation in Mode I and Mode II fractures on both {l brace}100{r brace} and {l brace}110{r brace} planes have been observed in crystals of LiF. The deformation is shown to nearly completely shield {l brace}110{r brace} plane cracks and prevent their propagation while deformation is less effective in shielding {l brace}100{r brace} plane cracks. The fracture toughness of MgO-partially-stabilized ZrO{sub 2} exhibiting transformation toughening been measured. The equations of linear elastic fracture mechanics have been self-consistantly formulated to include the residual displacement from the transformation wake. MgO single crystals were fatigued in plastic strain control at elevated temperatures. At high temperatures, dense bundles of dislocations were observed in transmission electron microscopy aligned perpendicular to the Burgers' vector directions. The thermodynamics of a superconducting second order phase transformation has been related to jumps in physical properties. A simple energy balance, without assuming an equation of state, is used to relate the rate of change of state variables to measurable physical properties. There are no preconceived assumptions about the superconducting mechanism.

Research Organization:
Rochester Univ., NY (USA). Dept. of Mechanical Engineering
Sponsoring Organization:
DOE/ER
DOE Contract Number:
FG02-84ER45051
OSTI ID:
6493240
Report Number(s):
DOE/ER/45051-3; ON: DE91001305
Country of Publication:
United States
Language:
English