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Title: Interdigitated back contact solar cell with high-current collection

Conference ·
OSTI ID:6379070

Internal current-collection efficiencies greater than 90 percent and energy-conversion efficiencies of 18 percent at 30 suns have been measured on a laboratory version of the interdigitated back contact (IBC) solar cell. The quantum efficiency at 600 nm was greater than 90 percent which implies a minority carrier lifetime of greater than 350 ..mu..sec and a front surface recombination velocity of less than 30 cm/sec on the better devices. To achieve these high-current collection efficiencies, a phosphorous gettering diffusion was performed on the front surface and then etched off. Also, thermal oxides were grown on the front and back of the cell to passivate the silicon surfaces. Although the internal collection efficiencies of the cell were high, series resistance caused the fill factor (FF) to decrease at concentrations above 30 suns. Dark current measurements on cells with a new grid spacing indicate that the series resistance is much lower than in the previous cell design. This should result in higher efficiencies at high concentration.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6379070
Report Number(s):
SAND-80-2206C; CONF-810526-13
Resource Relation:
Conference: 15. IEEE PV specialists conference, Orlando, FL, USA, 11 May 1981
Country of Publication:
United States
Language:
English