Selectively oxidized vertical-cavity laser performance and technology
The authors discuss revolutionary performance advances in selectively oxidized vertical-cavity surface emitting lasers (VCSELs), which have enabled low operating power laser diodes appropriate for aerospace applications. Incorporating buried oxide layers converted from AIGaAs layers within the laser cavity produces enhanced optical and electrical confinement enabling superior laser performance, such as high efficiency and modulation bandwidth. VCSELs also shown to be viable over varied environmental conditions such as ambient temperature and ionized radiation. The development of novel VCSEL technologies for advanced system applications is also described. Two dimensional individually addressable VCSEL arrays exhibit uniform threshold and operating characteristics. Bottom emitting 850 nm VCSEL arrays fabricated using wafer fusion are also reported.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 634061
- Report Number(s):
- SAND-98-0305C; CONF-980319-; ON: DE98002721; BR: YN0100000; TRN: AHC2DT01%%72
- Resource Relation:
- Conference: 1998 Institute of Electrical and Electronics Engineers (IEEE) aerospace conference, Snowmass, CO (United States), 21-28 Mar 1998; Other Information: PBD: Feb 1998
- Country of Publication:
- United States
- Language:
- English
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