CuInSe/sub 2/ solar cell research by sputter deposition: Annual subcontract report, 1 January 1986-31 December 1986
This report contains results of research on CuInSe/sub 2/ solar cells by sputter deposition. Most of the CuInSe/sub 2//CdS devices fabricated from CuInSe/sub 2/ deposited by reactive sputtering have been characterized by relatively low open-circuit voltages. Typical values range from 0.22 to 0.32 V. A contributing factor may be the lower In composition in the top layer of composite two-layer CuInSe/sub 2/ films (Cu-rich base layer, In-rich top layer) that we used in cell fabrication. The reason for the lower In content is an In rejection process occurring during deposition at elevated temperatures. Therefore, the major emphasis of this work was to increase the In content in the top layer of CuInSe/sub 2/ films deposited in composite two-layer configurations on Mo-coated, glass substrates. Variations in the relative currents to the Cu and In sputtering sources, the H/sub 2/Se injection rate, and the substrate temperature were explored. A temperature decrease from 450/sup 0/ to 400/sup 0/C increased the In composition from 25 at. % to about 27 at. %. A second approach, in which the In sputtering source was operated for a short time with no Cu sputtering, also yielded promising results.
- Research Organization:
- Illinois Univ., Urbana (USA). Coordinated Science Lab.; SLAC National Accelerator Lab., Menlo Park, CA (United States)
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 6269292
- Report Number(s):
- SERI/STR-211-3174; ON: DE87001184
- Resource Relation:
- Other Information: Portions of this document are illegible in microfiche products. Original copy available until stock is exhausted
- Country of Publication:
- United States
- Language:
- English
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