Energy losses and mean free paths of electrons in silicon dioxide

Conference · Thu Jan 01 00:00:00 EST 1981

OSTI ID:6085530

Ashley, J C; Anderson, V E

Theoretical models and calculations are combined with experimental optical data to determine a model energy-loss function for SiO/sub 2/. Sumrule checks and comparisons with experimental information are made to insure overall consistency of the model. The model energy-loss function is employed to calculate electron inelastic mean free paths and stopping powers for electrons with energies less than or equal to 10 keV in SiO/sub 2/.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6085530
• Report Number(s): CONF-810707-6; ON: DE81026353; TRN: 81-015737
• Resource Relation: Conference: IEEE conference on nuclear science and space radiation, Seattle, WA, USA, 21 Jul 1981
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ELECTRONS
ENERGY LOSSES
SILICON OXIDES
CHARGED-PARTICLE TRANSPORT
CARRIER MOBILITY
KEV RANGE 01-10
MEAN FREE PATH
STOPPING POWER
CHALCOGENIDES
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
KEV RANGE
LEPTONS
LOSSES
MOBILITY
OXIDES
OXYGEN COMPOUNDS
RADIATION TRANSPORT
SILICON COMPOUNDS
654001* - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments