Vertical gradient freeze GaAs: Growth and electrical properties
We have investigated the influence of silicon contamination prevention methods on the electrical properties of GaAs grown by the Vertical Gradient Freeze (VGF) technique. We report the effectiveness of these methods for GaAs crystals grown from two different starting materials: n-type with resistivities in the range of 10/sup /minus/1/ to 10/sup 3/ ..cap omega..-cm and semi-insulating (SI) with a resistivity of 10/sup 8/ ..cap omega..-cm. We have found that the impurities in the starting materials, specifically boron, carbon and silicon, have an effect on the ability to control silicon contamination with methods that have been reported previously in the literature. We also report the attainment of SI crystals using a PBN crucible, a SI charge and B/sub 2/O/sub 3/ encapsulation. 61 refs., 13 figs., 7 tabs.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6055130
- Report Number(s):
- LBL-27271; ON: DE89014894
- Resource Relation:
- Other Information: Thesis (M.S.). Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
ELECTRICAL PROPERTIES
BORON OXIDES
CARBON
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
ENCAPSULATION
SEMICONDUCTOR MATERIALS
SILICON
SYNTHESIS
ARSENIC COMPOUNDS
ARSENIDES
BORON COMPOUNDS
CHALCOGENIDES
ELEMENTS
GALLIUM COMPOUNDS
MATERIALS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
360104* - Metals & Alloys- Physical Properties