skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments

Technical Report ·
DOI:https://doi.org/10.2172/603490· OSTI ID:603490
; ;  [1]
  1. Case Western Reserve Univ., Cleveland, OH (United States); and others

X-ray absorption measurements are a well-known probe of the unoccupied states in a material. The same information can be obtained by using glancing angle X-ray reflectivity. In spite of several existing band structure calculations of the group III nitrides and previous optical studies in UV range, a direct probe of their conduction band densities of states is of interest. The authors performed a joint experimental and theoretical investigation using both of these experimental techniques for wurtzite GaN.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
603490
Report Number(s):
LBNL-39981; ON: DE97007345; TRN: 98:009515
Resource Relation:
Other Information: PBD: Apr 1997; Related Information: Is Part Of Advanced light source: Compendium of user abstracts 1993--1996; PB: 622 p.
Country of Publication:
United States
Language:
English