Amorphous Ge bipolar blocking contacts on Ge detectors
Semiconductor nuclear radiation detectors are usually operated in a full depletion mode and blocking contacts are required to maintain low leakage currents and high electric fields for charge collection. Blocking contacts on Ge detectors typically consist of n-type contacts formed by lithium diffusion and p-type contacts formed by boron ion implantation. Electrical contacts formed using sputtered amorphous Ge (a-Ge) films on high-purity Ge crystals were found to exhibit good blocking behavior in both polarities with low leakage currents. The a-Ge contacts have thin dead layers associated with them and can be used in place of lithium-diffused, ion-implanted or Schottky barrier contacts on Ge radiation detectors. Multi-electrode detectors can be fabricated with very simple processing steps using these contacts. 12 refs.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6015921
- Report Number(s):
- LBL-30606; CONF-911106-45; ON: DE92004094
- Resource Relation:
- Conference: IEEE nuclear science symposium, Santa Fe, NM (United States), 5-9 Nov 1991
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GE SEMICONDUCTOR DETECTORS
ELECTRIC CONTACTS
AMORPHOUS STATE
COBALT 60
ELECTRICAL TESTING
SPUTTERING
BETA DECAY RADIOISOTOPES
BETA-MINUS DECAY RADIOISOTOPES
COBALT ISOTOPES
ELECTRICAL EQUIPMENT
EQUIPMENT
INTERMEDIATE MASS NUCLEI
INTERNAL CONVERSION RADIOISOTOPES
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
MATERIALS TESTING
MEASURING INSTRUMENTS
MINUTES LIVING RADIOISOTOPES
NONDESTRUCTIVE TESTING
NUCLEI
ODD-ODD NUCLEI
RADIATION DETECTORS
RADIOISOTOPES
SEMICONDUCTOR DETECTORS
TESTING
YEARS LIVING RADIOISOT
440103* - Radiation Instrumentation- Nuclear Spectroscopic Instrumentation