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Title: Amorphous Ge bipolar blocking contacts on Ge detectors

Conference ·
OSTI ID:6015921

Semiconductor nuclear radiation detectors are usually operated in a full depletion mode and blocking contacts are required to maintain low leakage currents and high electric fields for charge collection. Blocking contacts on Ge detectors typically consist of n-type contacts formed by lithium diffusion and p-type contacts formed by boron ion implantation. Electrical contacts formed using sputtered amorphous Ge (a-Ge) films on high-purity Ge crystals were found to exhibit good blocking behavior in both polarities with low leakage currents. The a-Ge contacts have thin dead layers associated with them and can be used in place of lithium-diffused, ion-implanted or Schottky barrier contacts on Ge radiation detectors. Multi-electrode detectors can be fabricated with very simple processing steps using these contacts. 12 refs.

Research Organization:
Lawrence Berkeley Lab., CA (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6015921
Report Number(s):
LBL-30606; CONF-911106-45; ON: DE92004094
Resource Relation:
Conference: IEEE nuclear science symposium, Santa Fe, NM (United States), 5-9 Nov 1991
Country of Publication:
United States
Language:
English