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Title: Strain enhanced electron spin polarization observed in photoemision from InGaAs

Abstract

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 {mu}m-thick epitaxial layer of In{sub x}Ga{sub 1-x}As with x {approx} 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by X-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 {mu}m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin polarization for photoemitted electrons. 7 refs., 3 figs.

Authors:
;  [1]; ;  [2]; ;  [3]
  1. Stanford Linear Accelerator Center, Menlo Park, CA (USA)
  2. Wisconsin Univ., Madison, WI (USA). Dept. of Physics
  3. California Univ., Berkeley, CA (USA)
Publication Date:
Research Org.:
Stanford Linear Accelerator Center, Menlo Park, CA (USA)
Sponsoring Org.:
USDOE; National Science Foundation (NSF); USDOE, Washington, DC (USA); National Science Foundation, Washington, DC (USA)
OSTI Identifier:
5843183
Report Number(s):
SLAC-PUB-5546; CONF-910505-84; WISC-ex-91-317
ON: DE91012319; CNN: NSF-87-11709
DOE Contract Number:  
AC03-76SF00515; AC02-76ER00881
Resource Type:
Conference
Resource Relation:
Conference: 1991 Institute of Electrical and Electronics Engineers (IEEE) particle accelerator conference (PAC), San Francisco, CA (USA), 6-9 May 1991
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRON SOURCES; GALLIUM ARSENIDES; PHOTOEMISSION; INDIUM COMPOUNDS; LINEAR ACCELERATORS; PHOTOCATHODES; SPIN ORIENTATION; ACCELERATORS; ARSENIC COMPOUNDS; ARSENIDES; CATHODES; ELECTRODES; EMISSION; GALLIUM COMPOUNDS; ORIENTATION; PARTICLE SOURCES; PNICTIDES; RADIATION SOURCES; SECONDARY EMISSION; 430301* - Particle Accelerators- Ion Sources; 656002 - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)

Citation Formats

Maruyama, T, Garwin, E L, Prepost, R, Zapalac, G H, Smith, J S, and Walker, J D. Strain enhanced electron spin polarization observed in photoemision from InGaAs. United States: N. p., 1991. Web.
Maruyama, T, Garwin, E L, Prepost, R, Zapalac, G H, Smith, J S, & Walker, J D. Strain enhanced electron spin polarization observed in photoemision from InGaAs. United States.
Maruyama, T, Garwin, E L, Prepost, R, Zapalac, G H, Smith, J S, and Walker, J D. 1991. "Strain enhanced electron spin polarization observed in photoemision from InGaAs". United States. https://www.osti.gov/servlets/purl/5843183.
@article{osti_5843183,
title = {Strain enhanced electron spin polarization observed in photoemision from InGaAs},
author = {Maruyama, T and Garwin, E L and Prepost, R and Zapalac, G H and Smith, J S and Walker, J D},
abstractNote = {Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 {mu}m-thick epitaxial layer of In{sub x}Ga{sub 1-x}As with x {approx} 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be highly strained by the 0.9% lattice mismatch, as confirmed by X-ray diffractometer measurements of the lattice parameter. The electron polarization and the quantum efficiency have been measured as a function of the excitation photon energy from 1.25 to 2.0 eV. A significant enhancement of the electron polarization occurs in the vicinity of 1.33 eV where the expected strain-induced level splitting permits optical excitation of a single band transition. Measurements made on a control sample of 1.14 {mu}m thickness, significantly larger than the critical thickness for pseudomorphic strain, show no polarization enhancement. These measurements represent the first observation of strain-enhanced electron spin polarization for photoemitted electrons. 7 refs., 3 figs.},
doi = {},
url = {https://www.osti.gov/biblio/5843183}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed May 01 00:00:00 EDT 1991},
month = {Wed May 01 00:00:00 EDT 1991}
}

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