skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Depth of origin of sputtered atoms: Experimental and theoretical study of Cu/Ru(0001)

Abstract

The depth of origin of sputtered atoms is a subject of considerable interest. The surface sensitivity of analytical techniques such as Secondary Ion Mass Spectrometry (SIMS) and Surface Analysis by Resonance Ionization of Sputtered Atoms (SARISA), and the sputtering properties of strongly segregating alloy systems, are critically dependent on the sputtering depth of origin. A significant discrepancy exists between the predictions of the Sigmund theory and computer sputtering models; in general, the computer models predict a much shallower depth of origin. The existing experimental evidence suggests that most of the sputtered atoms originate in the topmost atomic layer, but until recently, the results have not been definitive. We have experimentally determined the depth of origin of atoms sputtered from surfaces consisting of Cu films of less than two monolayers on a Ru(0001) substrate. The Cu/Ru target was statically sputtered using 3.6 keV Ar/sup +/. The sputtered neutrals were non-resonantly laser ionized and detected using SARISA. The Cu/Ru sputtering yield ratio and the suppression of the Ru sputtering yield were determined for various Cu coverages. The results indicate that the majority of the sputtered atoms originate in the topmost atomic layer. The Cu/Ru system is also modeled using a modified Transportmore » of Ions in Matter (TRIM) code. It was found that TRIM C does not correctly treat the first atomic layer, resulting in a serious underestimate of the number of sputtered atoms which originate in this layer. The corrected version adequately describes the results, predicting that for the experimental conditions roughly two-thirds of the sputtered atoms originate in the first atomic layer. These results are significantly greater than the Sigmund theory estimate of >40%. 26 refs., 3 figs., 1 tab.« less

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab., IL (USA); Pittsburgh Univ., PA (USA). Surface Science Center; Hahn-Meitner-Institut fuer Kernforschung Berlin G.m.b.H. (Germany, F.R.)
OSTI Identifier:
5833232
Report Number(s):
CONF-871125-14
ON: DE88002848
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Conference
Resource Relation:
Conference: 34. national vacuum symposium and topical conference, Anaheim, CA, USA, 2 Nov 1987; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; SPUTTERING; COMPUTERIZED SIMULATION; THIN FILMS; COPPER; EXPERIMENTAL DATA; RUTHENIUM; THEORETICAL DATA; DATA; ELEMENTS; FILMS; INFORMATION; METALS; NUMERICAL DATA; PLATINUM METALS; SIMULATION; TRANSITION ELEMENTS; 656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)

Citation Formats

Burnett, J W, Biersack, J P, Gruen, D M, Joergensen, B, Krauss, A R, Pellin, M J, Schweitzer, E L, Yates, Jr, J T, and Young, C E. Depth of origin of sputtered atoms: Experimental and theoretical study of Cu/Ru(0001). United States: N. p., 1987. Web.
Burnett, J W, Biersack, J P, Gruen, D M, Joergensen, B, Krauss, A R, Pellin, M J, Schweitzer, E L, Yates, Jr, J T, & Young, C E. Depth of origin of sputtered atoms: Experimental and theoretical study of Cu/Ru(0001). United States.
Burnett, J W, Biersack, J P, Gruen, D M, Joergensen, B, Krauss, A R, Pellin, M J, Schweitzer, E L, Yates, Jr, J T, and Young, C E. 1987. "Depth of origin of sputtered atoms: Experimental and theoretical study of Cu/Ru(0001)". United States. https://www.osti.gov/servlets/purl/5833232.
@article{osti_5833232,
title = {Depth of origin of sputtered atoms: Experimental and theoretical study of Cu/Ru(0001)},
author = {Burnett, J W and Biersack, J P and Gruen, D M and Joergensen, B and Krauss, A R and Pellin, M J and Schweitzer, E L and Yates, Jr, J T and Young, C E},
abstractNote = {The depth of origin of sputtered atoms is a subject of considerable interest. The surface sensitivity of analytical techniques such as Secondary Ion Mass Spectrometry (SIMS) and Surface Analysis by Resonance Ionization of Sputtered Atoms (SARISA), and the sputtering properties of strongly segregating alloy systems, are critically dependent on the sputtering depth of origin. A significant discrepancy exists between the predictions of the Sigmund theory and computer sputtering models; in general, the computer models predict a much shallower depth of origin. The existing experimental evidence suggests that most of the sputtered atoms originate in the topmost atomic layer, but until recently, the results have not been definitive. We have experimentally determined the depth of origin of atoms sputtered from surfaces consisting of Cu films of less than two monolayers on a Ru(0001) substrate. The Cu/Ru target was statically sputtered using 3.6 keV Ar/sup +/. The sputtered neutrals were non-resonantly laser ionized and detected using SARISA. The Cu/Ru sputtering yield ratio and the suppression of the Ru sputtering yield were determined for various Cu coverages. The results indicate that the majority of the sputtered atoms originate in the topmost atomic layer. The Cu/Ru system is also modeled using a modified Transport of Ions in Matter (TRIM) code. It was found that TRIM C does not correctly treat the first atomic layer, resulting in a serious underestimate of the number of sputtered atoms which originate in this layer. The corrected version adequately describes the results, predicting that for the experimental conditions roughly two-thirds of the sputtered atoms originate in the first atomic layer. These results are significantly greater than the Sigmund theory estimate of >40%. 26 refs., 3 figs., 1 tab.},
doi = {},
url = {https://www.osti.gov/biblio/5833232}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1987},
month = {Thu Jan 01 00:00:00 EST 1987}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: