Development of reflective optical systems for XUV projection lithography

Conference · Tue Jan 01 00:00:00 EST 1991

DOI:https://doi.org/10.1364/SXRAY.1991.FB2· OSTI ID:5774268

Viswanathan, V K; Newnam, B E

We describe two full-field reflective reduction systems (1 cm{sup 2} and 6.25 cm{sup 2} image area) and one scanning system (25 mm x scan length image size) that meet the performance requirements for 0.1-{mu}m resolution projection lithography using extreme-ultraviolet (XUV) wavelengths from 10 to 15 nm. These systems consist of two centered, symmetric, annular aspheric mirrors with 35--40% central obscuration, providing a reduction ratio of 3.3 x. Outstanding features include the remarkably low distortion ({le} 10 nm) over the entire image field and the comparatively liberal tolerances on the mirror radii and alignment. While optimized annular illumination can improve the performance, the required performance can be met with full illumination, thereby allowing a simpler system design. 6 refs., 3 figs., 3 tabs.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (USA)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 5774268
• Report Number(s): LA-UR-91-1439; CONF-9104203-3; ON: DE91013167
• Resource Relation: Conference: Soft-x-ray projection lithography topical meeting, Monterey, CA (USA), 10-12 Apr 1991
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INTEGRATED CIRCUITS
FABRICATION
EXTREME ULTRAVIOLET RADIATION
IMAGES
MIRRORS
OPTICAL REFLECTION
PERFORMANCE
SPATIAL RESOLUTION
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
MICROELECTRONIC CIRCUITS
RADIATIONS
REFLECTION
RESOLUTION
ULTRAVIOLET RADIATION
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)