Improving the bulk laser-damage resistance of KDP by baking and pulsed-laser irradiation
Isolated bulk damage centers are produced when KDP crystals are irradiated by 1-ns 1064-nm pulses. We have tested about 100 samples and find the median threshold to be 7 J/cm/sup 2/ when the samples are irradiated only once at each test volume (1-on-1 tests). The median threshold increased to 11 J/cm/sup 2/ when the test volumes were first subjected to subthreshold laser irradiation (n-on-1 tests). We baked several crystals at temperatures from 110 to 165/sup 0/C and remeasured their thresholds. Baking increased thresholds in some crystals, but did not change thresholds of others. The median threshold of baked crystals ranged from 8 to 10 J/cm/sup 2/ depending on the baking temperature. In crystals that had been baked, subthreshold irradiation produced a large change in the bulk damage threshold, and reduced the volume density of damage centers relative to the density observed in unbaked crystals. The data are summarized in the table.
- Research Organization:
- Lawrence Livermore National Lab., CA (USA)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 5612997
- Report Number(s):
- UCRL-86692; CONF-811117-4; ON: DE82007605; TRN: 82-008052
- Resource Relation:
- Conference: 13. annual Boulder damage symposium, Boulder, CO, USA, 17 Nov 1981
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
POTASSIUM HYDRIDES
PHYSICAL RADIATION EFFECTS
POTASSIUM PHOSPHATES
BAKING
CRYSTALS
LASER RADIATION
OPTICAL SYSTEMS
ALKALI METAL COMPOUNDS
ELECTROMAGNETIC RADIATION
HEATING
HYDRIDES
HYDROGEN COMPOUNDS
OXYGEN COMPOUNDS
PHOSPHATES
PHOSPHORUS COMPOUNDS
POTASSIUM COMPOUNDS
RADIATION EFFECTS
RADIATIONS
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