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Title: Emerging materials systems for solar cell applications: Cu/sub 2-x/Se. Third quarterly technical progress report, November 1, 1979-February 1, 1980

Technical Report ·
DOI:https://doi.org/10.2172/5579315· OSTI ID:5579315

The purpose of this program is to investigate the feasibility of using Cu/sub 2-x/Se as a semiconductor material for the low cost production of photovoltaic solar cells. The Cu/sub 2-x/Se films are produced by coevaporation from individually monitored Cu and Se vapor sources. With a substrate temperature of 170/sup 0/C, single phase cubic Cu/sub 2-x/Se films have been produced. These films have a direct band gap of 2.2 eV and an indirect band gap of 1.4 eV. Fabrication of Cu/sub 2-x/Se/CdS cells has begun. Both front wall and back wall cells have been made. A theoretical computation on the thin-film Cu/sub 2-x/Se/CdS cell has indicated an achievable efficiency of greater than 10%.

Research Organization:
Boeing Aerospace Co., Seattle, WA (USA)
DOE Contract Number:
AC04-79ET23005
OSTI ID:
5579315
Report Number(s):
DOE/ET/23005-T3
Country of Publication:
United States
Language:
English