In situ ion-beam analysis and modification of sol-gel zirconia thin films

Conference · Mon May 01 00:00:00 EDT 1995

DOI:https://doi.org/10.1016/B978-0-444-82334-2.50112-X· OSTI ID:55301

Levine, T E ^[1]; Yu, Ning; Kodali, P; Walter, K C; Nastasi, M; Tesmer, J R; Maggiore, C J ^[2]; Mayer, J W ^[3]

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1. Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering
2. Los Alamos National Lab., NM (United States)
3. Arizona State Univ., Tempe, AZ (United States). Dept. of Chemical, Bio and Materials Science Engineering

We report the investigation of ion-beam-induced densification of sol-gel zirconia thin films via in situ ion backscattering spectrometry. We have irradiated three regions of a sample with neon, argon, and krypton ions. For each ion species, a series of irradiation and analysis steps were performed using an interconnected 3 MV tandem accelerator. The technique offers the advantages of minimizing the variation of experimental parameters and sequentially monitoring the densification phenomenon with increasing ion dose.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• Sponsoring Organization: Department of Defense, Washington, DC (United States); USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 55301
• Report Number(s): LA-UR-95-1436; CONF-950220-7; ON: DE95010994; CNN: Contract DAAL03-89-K-0154.; TRN: 95:013156
• Resource Relation: Conference: 9. international conference on ion beam modification of materials, Canberra (Australia), 5-10 Feb 1995; Other Information: PBD: [1995]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ZIRCONIUM OXIDES
PHYSICAL RADIATION EFFECTS
THIN FILMS
ION BEAMS
DENSITY