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Title: The use of the signal current pulse shape to study the internal electric field profile and trapping effects in neutron damaged silicon detectors

Conference ·
OSTI ID:5328576
;  [1];  [2]
  1. Brookhaven National Lab., Upton, NY (United States)
  2. Hamburg Univ. (Germany)

The induced current pulse from ionizing events occurring near contacts on each side of a p{sup +}-n-n{sup +} silicon junction detector may be used to map the electric field present in the detector. It is of interest to define the operative effects of fast neutron-induced displacement damage in detectors destined for high radiation environments in SSC or LHC. The hole current shape, in particular, has been useful to determine that the field maximum moves to the rear'' n{sup +} contact as the material apparently changes to p type at 8{times}10{sup 12} 1 MeV n/cm{sup 2}. Trapping times for both holes and electrons have been measured as a function of neutron fluence using the current pulse width to measure charge collection time as well as using calculated charge collection times. A clear linear relationship is found for the trapping probability (1/{tau}) versus neutron fluence. Current pulse shapes have been calculated for representative detector fields and mobility relationships and comparison with measured shapes is reasonable.

Research Organization:
Brookhaven National Lab., Upton, NY (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC02-76CH00016
OSTI ID:
5328576
Report Number(s):
BNL-47506; CONF-920299-2; ON: DE92014689
Resource Relation:
Conference: 6. European symposium on semiconductor detectors, Milano (Italy), 24-27 Feb 1992
Country of Publication:
United States
Language:
English