Current transport in W and WSI{sub x} ohmic contacts to InGaN and InN
- Univ. of Florida, Gainesville, FL (United States). Dept. of MSE; and others
The temperature dependence of the specific contact resistance of W and WSi{sub 0.44} contacts on n{sup +} In{sub 0.65}Ga{sub 0.35}N and InN was measured in the range -50 {degrees}C to 125 {degrees}C. The results were compared to theoretical values for different conduction mechanisms, to further elucidate the conduction mechanism in these contact schemes for all but as-deposited metal to InN where thermionic emission appears to be the dominant mechanism. The contacts were found to produce low specific resistance ohmic contacts to InGaN at room temperature, e{sup c} {approximately} 10{sup -7} {Omega} {center_dot} cm{sup 2} for W and e{sub c} of 4x 10{sup -7} {Omega} {center_dot} cm{sup 2} for WSi{sub x}. InN metallized with W produced ohmic contacts with e{sub c} {approximately} 10{sup -7} {Omega} {center_dot} cm{sup 2} and e{sub c} {approximately} 10{sup -6} {Omega} {center_dot} cm{sup 2} for WSi{sub x} at room temperature.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 532644
- Report Number(s):
- SAND-97-2350C; CONF-970302-24; ON: DE98000043; CNN: Grant N00014-92-J-1895; TRN: 97:005336
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 31 Mar - 4 Apr 1997; Other Information: PBD: 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thermal stability of W, WSi{sub {ital x}}, and Ti/Al ohmic contacts to InGaN, InN, and InAlN
Comparison of ohmic metallization schemes for InGaAlN