The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

Conference · Wed Oct 01 00:00:00 EDT 1997

OSTI ID:532643

Biefeld, R M; Allerman, A A; Kurtz, S R; Burkhart, J H

We describe the metal-organic chemical vapor deposition os InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 {degrees}C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH{sub 3}, and PH{sub 3}. By changing the layer thickness and composition we have prepared structures with low temperature ({le}20K) photoluminescence wavelengths ranging from 3.2 to 5.0 {mu}m. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS layers. An InAsSb/InAsP SLS injection laser emitted at 3.3 {mu}m at 80 K with peak power of 100 mW.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Financial Management and Controller, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 532643
• Report Number(s): SAND-97-2166C; CONF-970947-1; ON: DE98000048; TRN: 97:019477
• Resource Relation: Conference: 24. international symposium on compound semiconductors, San Diego, CA (United States), 7-11 Sep 1997; Other Information: PBD: 1997
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
36 MATERIALS SCIENCE
INDIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
INDIUM COMPOUNDS
SUPERLATTICES
LIGHT EMITTING DIODES