Degradation of blue AlGaN/InGaN/GaN LEDs subjected to high current pulses
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
Short-wavelength, visible-light emitting optoelectronic devices are needed for a wide range of commercial applications, including high-density optical data storage, full-color displays, and underwater communications. In 1994, high-brightness blue LEDs based on gallium nitride and related compounds (InGaN/AlGaN) were introduced by Nichia Chemical Industries. The Nichia diodes are 100 times brighter than the previously available SiC blue LEDs. Group-III nitrides combine a wide, direct bandgap with refractory properties and high physical strength. So far, no studies of degradation of GaN based LEDs have been reported. The authors study, reported in this paper, focuses on the performance of GaN LEDs under high electrical stress conditions. Their observations indicate that, in spite of a high defect density, which normally would have been fatal to other III-V devices, defects in group-III nitrides are not mobile even under high electrical stress. Defect tubes, however, can offer a preferential path for contact metals to electromigrate towards the p-n junction, eventually resulting in a short. The proposed mechanism of GaN diode degradation raises concern for prospects of reliable lasers in the group-III nitrides grown on sapphire.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States); New Energy and Industrial Technology Development Organization, Tokyo (Japan)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 52810
- Report Number(s):
- SAND-95-0504C; CONF-950432-2; ON: DE95008824; TRN: AHC29515%%81
- Resource Relation:
- Conference: International reliability physics symposium, Las Vegas, NV (United States), 3-6 Apr 1995; Other Information: PBD: [1994]
- Country of Publication:
- United States
- Language:
- English
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