Amorphous thin films for solar-cell applications. Final report, September 11, 1978-September 10, 1979
In Section II, Theoretical Modeling, theories for the capture of electrons by deep centers in hydrogenated amorphous silicon (a-Si:H) and for field-dependent quantum efficiency in a-Si:H are presented. In Section III, Deposition and Doping Studies, the optimization of phosphorus-doped a-Si:H carried out in four different discharge systems is described. Some details of the dc proximity and rf magnetron discharge systems are also provided. Preliminary mass spectroscopy studies of the rf magnetron discharge in both SiH/sub 4/ and SiF/sub 4/ are presented. In Section IV, Experimental Methods for Characterizing a-Si:H, recent work involving photoluminescence of fluorine-doped a-Si:H, photoconductivity spectra, the photoelectromagnetic effect, the photo-Hall effect and tunneling into a-Si:H is presented. Also, studies of the growth mechanism of Pt adsorbed on both crystalline Si and a-Si:H are described. Measurements of the surface photovoltage have been used to estimate the distribution of surface states of phosphorus-doped and undoped a-Si:H. Section V, Formation of Solar-Cell Structures, contains information on stacked or multiple-junction a-Si:H solar cells. In Section VI, Theoretical and Experimental Evaluation of Solar-Cell Parameters, an upper limit of approx. = 400 A is established for the hole diffusion length in undoped a-Si:H. A detailed description of carrier generation, recombination and transport in a-Si:H solar cells is given. Finally, some characteristics of Pd-Schottky-barrier cells are described for different processing histories.
- Research Organization:
- RCA Labs., Princeton, NJ (USA)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC03-78ET21074
- OSTI ID:
- 5277229
- Report Number(s):
- DOE/ET/21074-4
- Country of Publication:
- United States
- Language:
- English
Similar Records
Amorphous thin films for solar-cell applications. Quarterly report No. 1, 11 September-10 December 1979
Amorphous thin films for solar-cell applications. Quarterly report No. 2, December 12, 1978 to March 11, 1979
Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
SILICON
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
PLASMA ARC SPRAYING
TRAPS
SILICON SOLAR CELLS
CHARGE TRANSPORT
ELECTRICAL PROPERTIES
MATHEMATICAL MODELS
PERFORMANCE
AMORPHOUS STATE
AUGER EFFECT
CHARGE CARRIERS
CRYSTAL DOPING
DEHYDROGENATION
DIFFUSION LENGTH
EFFICIENCY
ELECTRONS
ENERGY LEVELS
EXPERIMENTAL DATA
FABRICATION
FILMS
GLOW DISCHARGES
GRAPHS
HALL EFFECT
HOLES
HYDROGENATION
MASS SPECTROSCOPY
P-N JUNCTIONS
PHOTOVOLTAIC EFFECT
PLATINUM
POTENTIAL ENERGY
QUANTUM EFFICIENCY
RECOMBINATION
SCHOTTKY BARRIER DIODES
SPECTRAL RESPONSE
TEMPERATURE DEPENDENCE
TRAPPING
TUNNEL EFFECT
CHEMICAL REACTIONS
DATA
DATA FORMS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC DISCHARGES
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
EQUIPMENT
FERMIONS
INFORMATION
JUNCTIONS
LEPTONS
LUMINESCENCE
METALS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PLATINUM METALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTROSCOPY
SPRAY COATING
SURFACE COATING
TRANSITION ELEMENTS
140501* - Solar Energy Conversion- Photovoltaic Conversion
656000 - Condensed Matter Physics
360601 - Other Materials- Preparation & Manufacture