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Title: Vacuum deposited polycrystalline silicon films for solar cell applications. Quarterly report, 1 April-30 June 1980

Technical Report ·
DOI:https://doi.org/10.2172/5167400· OSTI ID:5167400

Polycrystalline p-type films were vacuum deposited onto TiB/sub 2/ coated alumina and sapphire substrates. Epitaxial layers were also formed on single crystal silicon substrates. Junctions in the layers were created by both gaseous diffusion in a tube furnace and by vacuum deposition. The TiB/sub 2/ vacuum deposited bottom electrodes have resistivities between 30 and 40 ..mu.. ..cap omega..-cm. All-vacuum-deposited solar cells were fabricated for the first time. Efficiencies approaching those in the diffused junction devices were achieved. The n-layers were deposited on the previously deposited p-layer/TiB/sub 2//ceramic sandwiches by vacuum deposition of silicon in a phosphine (PH/sub 3/) atmosphere. Photovoltaic data in diffused junction samples, including efficiency and spectral response measurements, indicate that crystallite size may no longer be the limiting factor in achieving high efficiency; rather, performance is now being limited by the presence of impurities in the vacuum deposition silicon base region.

Research Organization:
Johns Hopkins Univ., Laurel, MD (USA). Applied Physics Lab.
DOE Contract Number:
AC0277CH00178
OSTI ID:
5167400
Report Number(s):
SERI/PR-8278-1-T3
Country of Publication:
United States
Language:
English