Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces
The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5101839
- Report Number(s):
- LBL-24157; CONF-880208-1; ON: DE88008247
- Resource Relation:
- Conference: 15. annual conference on physics and chemistry of semiconductor interfaces, Asilomar, CA, USA, 1 Feb 1988
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
FERMI LEVEL
SCHOTTKY DEFECTS
SURFACE PROPERTIES
INTERFACES
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
SCHOTTKY BARRIER DIODES
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ENERGY LEVELS
GALLIUM COMPOUNDS
MATERIALS
PNICTIDES
POINT DEFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
VACANCIES
360603* - Materials- Properties