U.S. Department of EnergyOffice of Scientific and Technical Information
Low cost Czochralski crystal growing technology: near term implementation of the flat plate photovoltaic cost reduction of the Low Cost Solar Array Project. Fifth quarterly progress report, April 1-June 30, 1980
Abstract
During this reporting period, the primary activity has been to develop microprocessor control of the crystal growth process and to develop and demonstrate the accelerated crystal growth program. Accelerated recharging of the quartz crucible by the RF melting of polycrystalline silicon feed rods was deemphasized by JPL primarily due to the unavailability of suitable quality feed rods at an effective economical price. The development of the cold crucible program as an alternative method of crucible recharging was continued, but at a lower priority. Work continued on the accelerated crystal growth program. Crystal growth runs were made utilizing the water cooled work coil previously used in the RF polycrystalline silicon rod melting program. Accelerated growth rates were demonstrated but an oxide build-up on the cold surface of the work coil, resulting in heavy flaking and consequent falling of oxide into the melt, resulted in abandoning this approach and redesigning, evaluating, and demonstrating an alternative heat sink arrangement. All necessary parts were received for the cold crucible premelter and system was assembled and interfaced to the multiturn high voltage RF power supply.
- Authors:
- Publication Date:
- Research Org.:
- Kayex Corp., Rochester, NY (USA)
- OSTI Identifier:
- 5066909
- Report Number(s):
- DOE/JPL/955270-80/2
- DOE Contract Number:
- NAS-7-100-955270
- Resource Type:
- Technical Report
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; CZOCHRALSKI METHOD; EQUIPMENT; SILICON; CRYSTAL GROWTH; CONTROL SYSTEMS; CRUCIBLES; DIAGRAMS; MICROPROCESSORS; MONOCRYSTALS; SILICON SOLAR CELLS; CRYSTAL GROWTH METHODS; CRYSTALS; DIRECT ENERGY CONVERTERS; ELEMENTS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture
Citation Formats
Roberts, E G. Low cost Czochralski crystal growing technology: near term implementation of the flat plate photovoltaic cost reduction of the Low Cost Solar Array Project. Fifth quarterly progress report, April 1-June 30, 1980. United States: N. p., 1980.
Web. doi:10.2172/5066909.
Roberts, E G. Low cost Czochralski crystal growing technology: near term implementation of the flat plate photovoltaic cost reduction of the Low Cost Solar Array Project. Fifth quarterly progress report, April 1-June 30, 1980. United States. https://doi.org/10.2172/5066909
Roberts, E G. 1980.
"Low cost Czochralski crystal growing technology: near term implementation of the flat plate photovoltaic cost reduction of the Low Cost Solar Array Project. Fifth quarterly progress report, April 1-June 30, 1980". United States. https://doi.org/10.2172/5066909. https://www.osti.gov/servlets/purl/5066909.
@article{osti_5066909,
title = {Low cost Czochralski crystal growing technology: near term implementation of the flat plate photovoltaic cost reduction of the Low Cost Solar Array Project. Fifth quarterly progress report, April 1-June 30, 1980},
author = {Roberts, E G},
abstractNote = {During this reporting period, the primary activity has been to develop microprocessor control of the crystal growth process and to develop and demonstrate the accelerated crystal growth program. Accelerated recharging of the quartz crucible by the RF melting of polycrystalline silicon feed rods was deemphasized by JPL primarily due to the unavailability of suitable quality feed rods at an effective economical price. The development of the cold crucible program as an alternative method of crucible recharging was continued, but at a lower priority. Work continued on the accelerated crystal growth program. Crystal growth runs were made utilizing the water cooled work coil previously used in the RF polycrystalline silicon rod melting program. Accelerated growth rates were demonstrated but an oxide build-up on the cold surface of the work coil, resulting in heavy flaking and consequent falling of oxide into the melt, resulted in abandoning this approach and redesigning, evaluating, and demonstrating an alternative heat sink arrangement. All necessary parts were received for the cold crucible premelter and system was assembled and interfaced to the multiturn high voltage RF power supply.},
doi = {10.2172/5066909},
url = {https://www.osti.gov/biblio/5066909},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1980},
month = {Tue Jan 01 00:00:00 EST 1980}
}