A Study of Contacts and Back-Surface Reflectors for 0.6eV Ga0.32In0.68As/InAs0.32P0.68 Thermophotovoltaic Monolithically Interconnected Modules
Thermophotovoltaic (TPV) systems have recently rekindled a high level of interest for a number of applications. In order to meet the requirement of low-temperature ({approx}1000 C) TPV systems, 0.6-eV Ga0.32In0.68As/InAs0.32P0.68 TPV monolithically interconnected modules (MIMs) have been developed at the National Renewable energy Laboratory (NREL)[1]. The successful fabrication of Ga0.32In0.68As/InAs0.32P0.68 MIMs depends on developing and optimizing of several key processes. Some results regarding the chemical vapor deposition (CVD)-SiO2 insulating layer, selective chemical etch via sidewall profiles, double-layer antireflection coatings, and metallization via interconnects have previously been given elsewhere [2]. In this paper, we report on the study of contacts and back-surface reflectors. In the first part of this paper, Ti/Pd/Ag and Cr/Pd/Ag contact to n-InAs0.32P0.68and p-Ga0.32In0.68As are investigated. The transfer length method (TLM) was used for measuring of specific contact resistance Rc. The dependence of Rc on different doping levels and different pre-treatment of the two semiconductors will be reported. Also, the adhesion and the thermal stability of Ti/Pd/Ag and Cr/Pd/Ag contacts to n-InAs0.32P0.68and p-Ga0.32In0.68As will be presented. In the second part of this paper, we discuss an optimum back-surface reflector (BSR) that has been developed for 0.6-eV Ga0.32In0.68As/InAs0.32P0.68 TPV MIM devices. The optimum BSR consists of three layers: {approx}1300{angstrom} MgF2 (or {approx}1300{angstrom} CVD SiO2) dielectric layer, {approx}25{angstrom} Ti adhesion layer, and {approx}1500{angstrom} Au reflection layer. This optimum BSR has high reflectance, good adhesion, and excellent thermal stability.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 5055
- Report Number(s):
- NREL/CP-520-25489; ON: DE00005055; TRN: US200306%%242
- Resource Relation:
- Conference: A Study of Contacts and Back-Surface Reflectors for 0.6eV Ga0.32In0.68As/InAs0.32P0.68 Thermophotovoltaic Monolithically Interconnected Modules, Presented at the 4th Conference on Thermophotovoltaic Generation of Electricity, Denver, CO (US), 11/11/1998--11/14/1998; Other Information: PBD: 23 Dec 1998
- Country of Publication:
- United States
- Language:
- English
Similar Records
InGaAs monolithic interconnected modules (MIMs)
InGaAs monolithic interconnected modules (MIM)