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Title: Ion beam synthesis and optical properties of semiconductor nanocrystals and quantum dots

Abstract

Nanocrystals of semiconductor materials have been fabricated in SiO{sub 2} by ion implantation and subsequent thermal annealing. Strong red photoluminescence (PL) peaked around 750 nm has been observed in samples containing Si nanocrystals in SiO{sub 2}. The Si nanocrystals in the samples with optimized PL intensities are a few nanometers in diameter. Difference in the absorption bandgap energies and the PL peak energies are discussed. Significant influence of implantation sequence on the formation of compound semiconductor nanocrystals are demonstrated with the GaAs in the SiO{sub 2} system. Optical absorption measurements show that Ga particles have already formed in the as-implanted stage if Ga is implanted first. A single surface phonon mode has been observed in the infrared reflectance measurement from samples containing GaAs nanocrystals.

Authors:
; ;  [1]
  1. and others
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Fisk Univ., Nashville, TN (United States)
Sponsoring Org.:
USDOE Office of Energy Research, Washington, DC (United States)
OSTI Identifier:
503498
Report Number(s):
CONF-970237-1
ON: DE97001340; TRN: 97:004547
DOE Contract Number:  
AC05-96OR22464; FG02-94ER45521
Resource Type:
Conference
Resource Relation:
Conference: NASA University Research Centers technical conference, Albuquerque, NM (United States), 16-19 Feb 1997; Other Information: PBD: Nov 1996
Country of Publication:
United States
Language:
English
Subject:
66 PHYSICS; 36 MATERIALS SCIENCE; SILICON OXIDES; ION IMPLANTATION; SEMICONDUCTOR MATERIALS; SYNTHESIS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE

Citation Formats

Zhu, J G, White, C W, and Withrow, S P. Ion beam synthesis and optical properties of semiconductor nanocrystals and quantum dots. United States: N. p., 1996. Web.
Zhu, J G, White, C W, & Withrow, S P. Ion beam synthesis and optical properties of semiconductor nanocrystals and quantum dots. United States.
Zhu, J G, White, C W, and Withrow, S P. 1996. "Ion beam synthesis and optical properties of semiconductor nanocrystals and quantum dots". United States. https://www.osti.gov/servlets/purl/503498.
@article{osti_503498,
title = {Ion beam synthesis and optical properties of semiconductor nanocrystals and quantum dots},
author = {Zhu, J G and White, C W and Withrow, S P},
abstractNote = {Nanocrystals of semiconductor materials have been fabricated in SiO{sub 2} by ion implantation and subsequent thermal annealing. Strong red photoluminescence (PL) peaked around 750 nm has been observed in samples containing Si nanocrystals in SiO{sub 2}. The Si nanocrystals in the samples with optimized PL intensities are a few nanometers in diameter. Difference in the absorption bandgap energies and the PL peak energies are discussed. Significant influence of implantation sequence on the formation of compound semiconductor nanocrystals are demonstrated with the GaAs in the SiO{sub 2} system. Optical absorption measurements show that Ga particles have already formed in the as-implanted stage if Ga is implanted first. A single surface phonon mode has been observed in the infrared reflectance measurement from samples containing GaAs nanocrystals.},
doi = {},
url = {https://www.osti.gov/biblio/503498}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Nov 01 00:00:00 EST 1996},
month = {Fri Nov 01 00:00:00 EST 1996}
}

Conference:
Other availability
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