New integrated polysilicon photoconductors for ultrafast measurements on silicon
A fully-integrated silicon-optical-switch technology is reported that demonstrates one picosecond sampling aperture when excited by a femtosecond laser. Fabrication of the polycrystalline-silicon-switch structure is accomplished with standard-integrated-circuit processing techniques to insure full compatibility with standard-VLSI processes. Photoresist-masked ion-beam irradiation is used to generate trapping sites in the photoconductive layer and tailor the switch on-time. Limited optimization of process parameters resulted in photoconductors demonstrating 3-dB measurement bandwidths over 100 GHz when used as sampling gates. A model for the device performance has been developed and is compared with experimental results. Application of the optical switch in a high speed sampling system for the measurement of striplines on a silicon wafer demonstrated dispersive effects that have been observed for the first time. 11 refs., 6 figs.
- Research Organization:
- Stanford Univ., CA (USA). Integrated Circuits Lab.; Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 5030343
- Report Number(s):
- LA-UR-85-3323; CONF-851237-1; ON: DE86000820
- Resource Relation:
- Conference: IEEE international electron devices meeting, Washington, DC, USA, 1 Dec 1985
- Country of Publication:
- United States
- Language:
- English
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