Recent advances in mid-infrared (3--6 micron) emitters
The authors describe the metal-organic chemical vapor deposition (MOCVD) of InAsSb/InAs multiple quantum well (MQW) and InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. They have made gain-guided, injection lasers using undoped, p-type AlAs{sub 0.16}Sb{sub 0.84} for optical confinement and both strained InAsSb/InAs MQW and InAsSb/InAsP SLS active regions. The lasers and LEDs utilize the semi-metal properties of a p-GaAsSb/n-InAs heterojunction as a source for electrons injected into active regions. A multiple-stage LED utilizing this semi-metal injection scheme is reported. Gain-guided, injected lasers with a strained InAsSb/InAs MQW active region operated up to 210 K in pulsed mode with an emission wavelength of 3.8--3.9 {micro}m and a characteristic temperature of 29--40 K. They also present results for both optically pumped and injection lasers with InAsSb/InAsP SLS active regions. The maximum operating temperature of an optically pumped 3.7 {micro}m SLS laser was 240 K. An SLS LED emitted at 4.0 {micro}m with 80 {micro}W of power at 300 K.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 486175
- Report Number(s):
- SAND-97-0189C; CONF-9705118-1; ON: DE97007600; TRN: AHC29713%%122
- Resource Relation:
- Conference: 2. international conference on low dimensional structures and devices (LSDS 97), Lisbon (Portugal), 17-23 May 1997; Other Information: PBD: [1997]
- Country of Publication:
- United States
- Language:
- English
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