Mapping residual stress fields from Vickers hardness indents using Raman microprobe spectroscopy
Micro-Raman spectroscopy is used to map the residual stress fields in the vicinity of Vickers hardness indents. Both 514.5 and 488.0 nm, light is used to excite the effect and the resulting shifted and broadened Raman peaks are analyzed using computer deconvolution. Half-wave plates are used to vary the orientation of the incident later light`s polarization state with respect to crystal orientation. The Raman scattered light is then analyzed for polarization dependences which are indicative of the various components of the Raman scattering tensor. Such studies can yield valuable information about the orientation of stress components in a well known stress field. The results can then be applied to the determination of stress components in machined semiconductor materials.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States); North Carolina State Univ., Raleigh, NC (United States)
- OSTI ID:
- 476629
- Report Number(s):
- LA-SUB-93-81; ON: DE97003578; TRN: 97:002288-0005
- Resource Relation:
- Other Information: PBD: Dec 1988; Related Information: Is Part Of Precision Engineering Center. 1988 Annual report, Volume VI; Dow, T. [ed.]; Fornaro, R.; Keltie, R.; Paesler, M. [and others]; PB: 367 p.
- Country of Publication:
- United States
- Language:
- English
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